TLE4964-4M Datasheet, PDF (16/26 Pages) Infineon Technologies AG – High Precision Automotive Hall Effect Switch

TLE4964-4M
Specification
3.5
Electro Magnetic Compatibility
Characterization of Electro Magnetic Compatibility is carried out on a sample basis from one qualification lot. Not
all specification parameters have been monitored during EMC exposure.
Vs
+5V
Rs
RQ = 1.2kΩ
V_DD
C_DD = 10nF
Q
CQ = 10nF
GND
Figure 3-4 EMC Test Circuit
Ref: ISO 7637-2 (Version 2004), test circuit Figure 3.4 (with external resistor, R_S = 100 Ω)
Table 3-6
Magnetic Compatibility
Parameter
Symbol
Level / Type
Status
Testpulse 1
Testpulse 2a¹⁾
V_EMC
-100 V
C
60 V/110 V
A/C
Testpulse 2b
10 V
C
Testpulse 3a
-150 V
A
Testpulse 3b
100 V
A
Testpulse 4²⁾
-7 V / -5.5 V
A
Testpulse 5b³⁾
U_S = 86.5 V / U_S* = 28.5 V A
1) ISO 7637-2 (2004) describes internal resistance = 2 Ω (former 10 Ω).
2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V +/- 0.2 V.
3) A central load dump protection of 42 V is used. Us* = 42 V-13.5 V.
Ref: ISO 7637-2 (Version 2004), test circuit Figure 3.4 (without external resistor, R_S = 0Ω)
Table 3-7
Electro Magnetic Compatibility
Parameter
Symbol
Level / Type
Testpulse 1
Testpulse 2a¹⁾
V_EMC
-50 V
50 V
Testpulse 2b
10 V
Testpulse 3a
-150 V
Testpulse 3b
Testpulse 4²⁾
Testpulse 5b³⁾
100 V
-7 V / 5.5 V
U_S = 86.5 V / U_S* = 28.5 V
1) ISO 7637-2 (2004) describes internal resistance = 2 Ω (former 10 Ω).
2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V +/- 0.2 V.
3) A central load dump protection of 42 V is used. Us* = 42 V-13.5 V.
Status
C
A
C
A
A
A
A
Data Sheet
16
Revision 1.0, 2013-05-07