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| TLE4964-4M Datasheet, PDF (12/26 Pages) Infineon Technologies AG – High Precision Automotive Hall Effect Switch | |||
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3
Specification
TLE4964-4M
Specification
3.1
Application Circuit
The following Figure 3-1 shows the basic option of an application circuit. Only a pull-up resisotor RQ is necessary.
An external series resistor for Vs is not needed. The resistor RQ has to be in a dimension to match the applied VS
to keep IQ limited to the operating range of maximum 25 mA.
e.g.: VS = 12 V; IQ = 12 V/1200 ⦠= 10 mA
Vs
VDD
RQ = 1.2kΩ
Q
GND
Figure 3-1
Basic Application Circuit #1: Only Pull-Up Resistor is necessary
Vs
VDD
RQ = 1.2kΩ
CDD = 47nF
Q
TVS diode
e.g. ESD24VS2U
GND
Figure 3-2 Enhanced Application Circuit #2 for extended ESD robustness
With an additional capacitor CDD and a transient voltage suppression (TVS) diode an extended ESD robustness
of 15kV on system level is achieved (Figure 3-2). If an increased robustness for e.g. testpulse 1 is required, a
serial resistor in the suppply needs to be added (see also Chapter 3.5).
Data Sheet
12
Revision 1.0, 2013-05-07
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