HYS64D16000 Datasheet, PDF (16/24 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

HYS64D[32020/16000]HDL–6–C
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 8 I_DD Specification
Part Number & Organization
HYS64D16000HDL–6–C
HYS64D32020HDL–6–C
Unit Note ¹⁾²⁾
128MB
256MB
×64
×64
1 Rank
2 Ranks
–6
–6
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
typ.
max.
260
300
320
380
14
18
100
120
320
96
44
60
136
160
340
400
360
440
540
640
6
6
820
960
typ.
max.
396
460
456
540
28
36
200
240
640
192
88
120
272
320
476
560
496
600
676
800
11
11
956
1120
mA ³⁾
mA ³⁾⁴⁾
mA ⁵⁾
mA ⁵⁾
mA ⁵⁾
mA ⁵⁾
mA ⁵⁾
mA ³⁾⁴⁾
mA ³⁾
mA ³⁾
mA ⁵⁾
mA ³⁾⁴⁾
1) Module I_DD values are calculated on the basis of component I_DD and can be measured differently according to DQ loading
capacity.
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the I_DDx values of the component data sheet as follows:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included in the calculations (see note 1)
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
16
Rev. 0.5, 2003-08