HYS64D16000 Datasheet, PDF (14/24 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

HYS64D[32020/16000]HDL–6–C
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 6 Electrical Characteristics and DC Operating Conditions (cont’d)
Parameter
Symbol
Values
Unit Note/Test Condition ¹⁾
Input Leakage Current
I_I
Min.
–2
Output Leakage Current I_OZ
–5
Output High Current,
I_OH
—
Normal Strength Driver
Output Low
I_OL
16.2
Current, Normal Strength
Driver
Typ.
Max.
2
5
–16.2
—
µA Any input 0 V ≤ V_IN ≤ V_DD;
All other pins not under test
= 0 V ⁶⁾⁷⁾
µA DQs are disabled;
0 V ≤ V_OUT ≤ V_DDQ ⁶⁾
mA V_OUT = 1.95 V ⁶⁾
mA V_OUT = 0.35 V ⁶⁾
1) 0 °C ≤ T_A ≤ 70 °C
2) Peak to peak AC noise on V_REF may not exceed ± 2% V_{REF (DC)}. V_REF is also expected to track noise variations in V_DDQ.
3) V_TT is not applied directly to the device. V_TT is a system supply for signal termination resistors, is expected to be set equal
to V_REF, and must track variations in the DC level of V_REF.
4) V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
5) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
6) Inputs are not recognized as valid until V_REF stabilizes.
7) Values are shown per DDR SDRAM component
Data Sheet
14
Rev. 0.5, 2003-08