1EDI10I12MF Datasheet, PDF (13/22 Pages) Infineon Technologies AG – Output with Clamp variant for IGBT

1EDI EiceDRIVER™ Compact
1EDIxxI12MF
Functional Description
4.3.3 Short Circuit Clamping
During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An
additional protection circuit connected to OUT and CLAMP limits this voltage to a value slightly higher than the
supply voltage. A maximum current of 500 mA may be fed back to the supply through one of these paths for 10 μs.
If higher currents are expected or tighter clamping is desired external Schottky diodes may be added.
4.3.4 Active Miller Clamp
In a half bridge configuration the switched off IGBT tends to dynamically turn on during turn on phase of the
opposite IGBT. A Miller clamp allows sinking the Miller current across a low impedance path in this high dV/dt
situation. Therefore in many applications, the use of a negative supply voltage can be avoided.
During turn-off, the gate voltage is monitored and the clamp output is activated when the gate voltage drops below
typical 2 V (referred to GND2). The clamp is designed for a Miller current in the same range as the nominal output
current.
4.4
Non-Inverting and Inverting Inputs
There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output while
IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high, please see Figure 6. A
minimum input pulse width is defined to filter occasional glitches.
4.5
Driver Output
The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of
gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to
the low internal voltage drop, switching behaviour of the IGBT is predominantly governed by the gate resistor.
Furthermore, it reduces the power to be dissipated by the driver.
Data Sheet
13
Rev. 2.0, 2014-11-10