TLE7185-1E Datasheet, PDF (12/23 Pages) Infineon Technologies AG – 3-Phase Bridge Driver IC

TLE7185-1E
Description and Electrical Characteristics
Electrical Characteristics MOSFET drivers
V_S = 5.5 to 32V, T_j = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
5.1.5 ILx; ENA; STOE pull down resistors R_IL
20
–
5.1.6 INH pull down resistor
R_{IL_INH}
30
–
5.1.7 Low level input voltage of INH
V_INHL
–
–
5.1.8 High level input voltage of INH
V_INHH
2.5
–
Charge pump
45
kΩ –
75
kΩ –
0.75 V
–
–
V
–
5.1.9 Charge pump output voltage
5.1.10 Charge pump frequency
MOSFET driver output
V_CB
11
–
13.5 V
V_s=7..32V;
6xQ_Gxf_PWM≤30mA
f_CP
38
55
72
kHz –
5.1.11 Output source resistance
R_Sou
–
–
13.5 Ω
–
5.1.12 Output sink resistance
R_Sink
–
–
9.0
Ω
–
5.1.13 High level output voltage
V_Gxx
–
–
13.5 V
V_S<32V,
6xQ_Gxf_PWM≤30mA
5.1.14 High level output voltage
V_Gxx
9
10
–
V
V_s=7V,
6xQ_Gxf_PWM≤30mA,
D.C.=94%;
5.1.15 High level output voltage
f_PWM=20kHz
V_GUV
–
–
1.2
V
INH=low or UVLO¹⁾
5.1.16 Pull down resistor at BHx to GND R_INH
30
–
80
kΩ INH=low or UVLO
5.1.17 Pull down resistor at CB to GND R_CBUV 10
–
30
kΩ INH=low or UVLO
5.1.18 Bias current into BHx
I_BH
–
–
120
µA
V_BSx>5V;
no switching
5.1.19 Bias current out of SHx
I_SH
5.1.20 Bias current out of SLx
I_SL
5.1.21 Programmable internal dead time t_DT
5.1.22
5.1.23
5.1.24
5.1.25
5.1.26
5.1.27
Max. internal dead time
Input propagation time (low on)
Input propagation time (low off)
Input propagation time (high on)
Input propagation time (high off)
Absolute input propagation time
difference between above
propagation times
t_{DT_MAX}
t_P(ILN)
t_P(ILF)
t_P(IHN)
t_P(IHF)
t_P(an)
–
40
–
µA
–
–
1
mA
0.08 0.14 0.20 µs
0.25 0.41 0.57
0.62 1.05 1.45
1.0
1.85 2.7
2.0
3.82 5.6
2.3
–
6.4
µs
0
–
200 ns
0
–
200 ns
0
–
200 ns
0
–
200 ns
–
–
100 ns
INH=ENA=high;
IHx =high;
V_BSx=5V..13.0V
0V≤V_SH≤V_S+1V;
no switching;
V_BSx≥5V
R_DT=0 Ω
R_DT=10 kΩ
R_DT=47 kΩ
R_DT=100 kΩ
R_DT=1000 kΩ
DT pin open
C_Load=11nF;
R_Load=1Ω
Data Sheet
12
Rev. 2.4, 2010-07-16