TLE7185-1E Datasheet, PDF (11/23 Pages) Infineon Technologies AG – 3-Phase Bridge Driver IC

TLE7185-1E
Description and Electrical Characteristics
provide in such conditions clearly less than 9V to the gate of the external MOSFETs, increasing their R_DSon and
the associated power dissipation.
The TLE7185-1E has a charge pump circuitry for external capacitors.
The operation of the charge pump is independent upon the pulse pattern of the MOSFETs.
The output of the charge pump is regulated to about 12V.
The output of the charge pump supplies the output stages for the low side MOSFETs with sufficient voltage to
assure 10V at the MOSFETs´ gate even if the supply voltage is below 10V.
It supplies as well the bootstrap circuitry for the high side output stages. Off course the bootstrap principle leads
to the fact that the bootstrap capacitors needs to be charged regularly. The charging time for the bootstrap
capacitor is specified (duty cycle HS) as well as the current consumption from the bootstrap capacitor in
permanent “on” condition.
The charge pump is only deactivated when the device is put into sleep mode via INH.
During Start Up of the device it is not allowed to have any PWM patterns at the ILx and IHx pins until the charge
pumps have ramped up to their final values or it is recommended to keep the ENA pin low.
The size of the charge pump capacitor (pump capacitors C_CP as well as buffer capacitor C_CB) can be varied
between 1 µF and 4.7 µF. Yet, larger capacitor values result in higher charge pump voltages and less voltage
ripple on the charge pump buffer capacitor CB. Besides the capacitance values the ESR of the buffer capacitor
CB determines the voltage ripple as well. It is recommended to use buffer capacitor CB that has small ESR.
Please. see also Chapter 5.1.3 for capacitor selection.
5.1.3 Sleep Mode
When the INH pin is set to low, the driver will be set to sleep mode. The INH pin switches off the complete supply
structure of the device and leads finally to an under voltage shut down of the complete driver. Enabling the device
with the INH pin means to switch on the supply structure. The device will run through power on reset during wake
up. It is recommended to perform a Reset by ENA after Wake up to remove possible ERR signals; Reset is
performed by keeping one or more ENA pins low until the charge pump voltages have ramped up.
Enabling and disabling with the INH pin is not very fast. For fast enable / disable the ENA pin is recommended.
When the TLE7185-1E is in INH mode (INH is low) or when the supply voltage is not available on the Vs pin, then
the driver IC is not supplied, the charge pump is inactive and the charge pump buffer capacitor as well as the
bootstrap capacitors are discharged.
5.1.4 Electrical Characteristics
Electrical Characteristics MOSFET drivers
V_S = 5.5 to 32V, T_j = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
Inputs
5.1.1 Low level input voltage of ILx; IHx; V_{I_LL}
–
–
1.0
V
–
ENA; STOE
5.1.2 High level input voltage of ILx; IHx; V_{I_HL}
2.0
–
–
V
–
ENA; STOE
5.1.3 Input hysteresis of IHx; ILx; ENA; dV_I
100 –
–
mV –
STOE
5.1.4 IHx pull up resistors
R_IH
20
–
45
kΩ pulled to 5V
Data Sheet
11
Rev. 2.4, 2010-07-16