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ICS8545I-02 Datasheet, PDF (4/13 Pages) Integrated Device Technology – Low Skew, 1-to-4 LVCMOS/LVTTL-to-LVDS Fanout Buffer
ICS8545I-02 Data Sheet
LOW SKEW, 1-TO-4 LVCMOS/LVTTL-TO-LVDS FANOUT BUFFER
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
Item
Supply Voltage, VDD
Inputs, VI
Outputs, IO
Continuos Current
Surge Current
Package Thermal Impedance, θJA
Storage Temperature, TSTG
Rating
4.6V
-0.5V to VDD + 0.5V
10mA
15mA
91.1°C/W (0 mps)
-65°C to 150°C
DC Electrical Characteristics
Table 4A. Power Supply DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
VDD
Positive Supply Voltage
IDD
Power Supply Current
3.135
Typical
3.3
Maximum
3.465
90
Units
V
mA
Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
VIH
Input High Voltage
VIL
Input Low Voltage
IIH
Input
CLK1, CLK2, CLK_SEL
High Current OE, CLK_EN
IIL
Input
CLK1, CLK2, CLK_SEL
Low Current OE, CLK_EN
VDD = VIN = 3.465V
VDD = VIN = 3.465V
VDD = 3.465V, VIN = 0V
VDD = 3.465V, VIN = 0V
2
-0.3
-5
-150
Typical
Maximum
VDD + 0.3
0.8
150
5
Units
V
V
µA
µA
µA
µA
Table 4C. LVDS DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C
Symbol Parameter
Test Conditions
VOD
∆VOD
VOS
∆VOS
Differential Output Voltage
VOD Magnitude Change
Offset Voltage
VOS Magnitude Change
Minimum
275
1.1
Typical
1.25
5
Maximum
525
50
1.4
50
Units
mV
mV
V
mV
ICS8545AGI-02 REVISION A JULY 29, 2009
4
©2009 Integrated Device Technology, Inc.