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| ICS844004-104 Datasheet, PDF (4/16 Pages) Integrated Device Technology – FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER | |||
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ICS844004-104
FEMTOCLOCKâ¢CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER
Table 3C. LVCMOS/LVTTL DC Characteristics, VDD = VDDO = 3.3V ± 5% or 2.5V ± 5%, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
VIH
Input High Voltage
VDD = 3.3V
2
VDD = 2.5V
1.7
VIL
Input Low Voltage
VDD = 3.3V
-0.3
VDD = 2.5V
-0.3
IIH
Input
High Current
REF_CLK,
MR, F_SEL[0:1],
nPLL_SEL, nXTAL_SEL
VDD = VIN = 3.465V
or 2.625V
VDD + 0.3
VDD + 0.3
0.8
0.7
150
IIL
Input
Low Current
REF_CLK,
MR, F_SEL[0:1],
nPLL_SEL, nXTAL_SEL
VDD = 3.465V or 2.625V,
VIN = 0V
-5
Units
V
V
V
µA
µA
Table 3D. LVDS DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum
VOD
Differential Output Voltage
300
âVOD
VOD Magnitude Change
VOS
Offset Voltage
1.2
âVOS
VOS Magnitude Change
Typical
450
1.425
Maximum
600
50
1.65
50
Units
mV
mV
V
mV
Table 3E. LVDS DC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum
VOD
Differential Output Voltage
250
âVOD
VOD Magnitude Change
VOS
Offset Voltage
1.0
âVOS
VOS Magnitude Change
Typical
400
1.2
Maximum
550
50
1.4
50
Units
mV
mV
V
mV
Table 4. Crystal Characteristics
Parameter
Test Conditions
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
NOTE: Characterized using an 18pF parallel resonant crystal.
Minimum Typical Maximum
Fundamental
23.33
26.5625
28.33
50
7
Units
MHz
â¦
pF
IDT⢠/ ICS⢠LVDS FREQUENCY SYNTHESIZER
4
ICS844004AK-104 REV. A SEPTEMBER 15, 2008
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