ICS83908I-02 Datasheet, PDF (4/16 Pages) Integrated Device Technology – LOW SKEW, 1-TO-8 CRYSTAL-TO-LVCMOS FANOUT BUFFER

ICS83908I-02
LOW SKEW, 1-TO-8 CRYSTAL-TO-LVCMOS FANOUT BUFFER
PRELIMINARY
TABLE 4E. POWER SUPPLY DC CHARACTERISTICS, V_DD = 2.5V±5%, V_DDO = 1.8V±0.2V, TA = -40°C TO 85°C
Symbol Parameter
Test Conditions
Minimum Typical
V_DD
V_DDO
I_DD
Core Supply Voltage
Output Supply Voltage
Power Supply Current
No Load & XTALx selected
No Load & CLK0 selected
2.375
2.5
1.6
1.8
15
0
I_DDO
Output Supply Current
No Load & CLK0 selected
0
Maximum
2.625
2.0
Units
V
V
mA
mA
mA
TABLE 4F. LVCMOS/LVTTL DC CHARACTERISTICS, TA = -40°C TO 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
V_IH
Input High Voltage
V_DD = 3.3V ± 5%
2.2
V_DD = 2.5V ± 5%
1.6
V_DD + 0.3
V
V_DD + 0.3
V
V_IL
Input Low Voltage
V_DD = 3.3V ± 5%
-0.3
V_DD = 2.5V ± 5%
-0.3
1.3
V
0.9
V
I_IH
CLK0,
Input High Current ^CLK_SEL0:1
V_DD = 3.3V or 2.5V ± 5%
OE
V_DD = 3.3V or 2.5V ± 5%
150
µA
5
µA
I_IL
CLK0,
Input Low Current ^CLK_SEL0:1
V = 3.3V or 2.5V ± 5%
DD
-5
µA
OE
V_DD = 3.3V or 2.5V ± 5%
-150
µA
V_DDO = 3.3V ± 5%; NOTE 1
2.6
V
V_OH
Output HighVoltage
V_DDO = 2.5V ± 5%; NOTE 1
1.8
V
V_DDO = 1.8V ± 0.2V; NOTE 1
1.2
V
V_DDO = 3.3V ± 5%; NOTE 1
0.6
V
V_OL
Output Low Voltage
V_DDO = 2.5V ± 5%; NOTE 1
0.5
V
V_DDO = 1.8V ± 0.2V; NOTE 1
0.4
V
NOTE 1: Outputs terminated with 50Ω to V_DDO/2. See Parameter Measurement section, "Load Test Circuit" diagrams.
TABLE 5. CRYSTAL CHARACTERISTICS
Parameter
Mode of Oscillation / cut
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Drive Level
Test Conditions
Minimum Typical Maximum
Fundamental
10
40
50
7
1
Units
MHz
Ω
pF
mW
IDT^™ / ICS^™ LVCMOS FANOUT BUFFER
4
ICS83908AGI-02 REV. B JULY 24, 2007