83918 Datasheet, PDF (4/19 Pages) Integrated Device Technology – Maximum output frequency

83918 DATA SHEET
Table 3D. Power Supply DC Characteristics, V_DD = V_DDO = 2.5V±5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum Typical
V_DD
V_DDO
I_DD
I_DDO
Positive Supply Voltage
Output Supply Voltage
Power Supply Current
Output Supply Current
No Load
2.375
2.5
2.375
2.5
Maximum
2.625
2.625
23
25
Units
V
V
mA
mA
Table 3E. Power Supply DC Characteristics, V_DD = 2.5V±5%, V_DDO = 1.8V±0.2V, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
V_DD
V_DDO
I_DD
I_DDO
Positive Supply Voltage
Output Supply Voltage
Power Supply Current
Output Supply Current
No Load
2.375
2.5
2.625
1.6
1.8
2.0
23
24
Units
V
V
mA
mA
Table 3F. LVCMOS/LVTTL DC Characteristics, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
V_IH
Input High Voltage
V_DD = 3.465V
2
V_DD = 2.5V
1.7
V_IL
Input
Low Voltage
V_DD = 3.465V
-0.3
V_DD = 2.5V
-0.3
I_IH
Input
CLK_SEL,
High Current LVCMOS_CLK
V_DD = V_IN = 3.465V
V_DD + 0.3
V
V_DD + 0.3
V
0.8
V
0.7
V
150
µA
I_IL
Input
Low Current
CLK_SEL,
LVCMOS_CLK
V_DD = 3.465V, V_IN = 0V
-5
µA
V_OH
Output High Voltage
V_OL
Output Low Voltage
V_DDO = 3.465V
V_DDO = 2.625V
V_DDO = 2V
V_DDO = 3.465 or 2.625V
V_DDO = 2V
2.6
1.8
V_DDO – 0.3
V
V
V
0.5
V
0.35
V
NOTE 1: Outputs terminated with 50 to V_DDO/2. See Parameter Measurement Information section. Load Test Circuit diagrams.
Table 4. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Test Conditions
Minimum Typical Maximum
Fundamental
10
40
50
7
Units
MHz

pF
Rev B 3/25/15
4
LOW SKEW, 1:18 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER