5962-3829407MXA Datasheet, PDF (4/10 Pages) Integrated Device Technology – CMOS Static RAM 64K (8K x 8-Bit)

IDT7164S/L
CMOS Static RAM 64K (8K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
DC Electrical Characteristics (VCC = 5.0V ± 10%)
IDT7164S
IDT7164L
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
|ILI| Input Leakage Current
VCC = Max.,
VIN = GND to VCC
MIL.
____
COM'L. & IND
____
10
____
5
____
5
2
µA
|ILO| Output Leakage Current
VCC = Max., CS1 = VIH, MIL.
____
VOUT = GND to VCC
COM'L. & IND
____
10
____
5
____
5
2
µA
VOL Output Low Voltage
IOL = 8mA, VCC = Min.
____
0.4
____
0.4
V
VOH Output High Voltage
IOL = 10mA, VCC = Min.
IOH = -4mA, VCC = Min.
____
0.5
____
0.5
2.4
____
2.4
____
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)
Typ.⁽¹⁾
VCC @
Max.
VCC @
Symbol
Parameter
Test Condition
Min.
2.0V
3.0V
2.0V
3.0V
V
2967 tbl 09
Unit
VDR
VCC for Data Retention
ICCDR
Data Retention Current
____
2.0
____
____
____
____
V
MIL.
____
10
15
200
300
μA
COM'L. & IND
____
10
15
60
90
tCDR⁽³⁾
tR⁽³⁾
Chip Deselect to Data
Retention Time
Operation Recovery Time
1. CS1 > VHC
CS2 > VHC, or
2. CS2 < VLC
0
____
____
____
____
ns
tRC⁽²⁾
____
____
____
____
ns
IILII⁽³⁾
Input Leakage Current
____
____
____
2
NOTES:
1. TA = +25°C.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
2
μA
2967 tbl 10
AC Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
5ns
Input Timing Reference Levels
1.5V
Output Reference Levels
AC Test Load
1.5V
See Figures 1 and 2
2967 tbl 11
5V
5V
DATAOUT
255Ω
480Ω
30pF*
DATAOUT
255Ω
480Ω
5pF*
,
,
2967 drw 04
2967 drw 03
Figure 1. AC Test Load
Figure 2. AC Test Load
(for tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2, tOHZ, tOW, and tWHZ)
*Includes scope and jig capacitances
4