ICS844020-45 Datasheet, PDF (3/13 Pages) Integrated Device Technology – FEMTOCLOCK™ CRYSTAL-TO-LVDS/LVCMOS FREQUENCY SYNTHESIZER

ICS844020-45
FEMTOCLOCK™ CRYSTAL-TO-LVDS/LVCMOS FREQUENCY SYNTHESIZER
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
Inputs, V_I
Outputs, I_O (LVCMOS)
Outputs, I_O (LVDS)
Continuous Current
Surge Current
4.6V
-0.5V to V_DD + 0.5V
-0.5V to V_DD + 0.5V
10mA
15mA
Operating Temperature Range, T_A -40°C to +85°C
Storage Temperature, T_STG
-65°C to 150°C
Package Thermal Impedance, θ_JA 22.3°C/W (0 lfpm)
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage
to the device. These ratings are stress specifi-
cations only. Functional operation of product at
these conditions or any conditions beyond those
listed in the DC Characteristics or AC Character-
istics is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may
affect product reliability.
TABLE
3A.
POWER
SUPPLY
DC
CHARACTERISTICS,
V
DD
=
V
DDA
=
V
DDO
=
2.5V
±
5%,TA
=
0°C
TO
70°C
Symbol
V_DD
V_DDA
V_DDO
Parameter
Core Supply Voltage
Analog Supply Voltage
Output Supply Voltage
Test Conditions
Minimum
2.375
V_DD – I_DDA*10Ω
2.375
Typical
2.5
2.5
2.5
I_DD
Power Supply Current
TBD
I_DDA
Analog Supply Current
I_DDO
Output Supply Current
TBD
TBD
Maximum
2.625
V_DD
2.625
Units
V
V
V
mA
mA
mA
TABLE 3B. LVCMOS/LVTTL DC CHARACTERISTICS, V_DD = V_DDA = V_DDO = 2.5V ± 5%,TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
V_OH
Output High Voltage; NOTE 1 Q17:Q19
V_DDO = 2.625V±5%
1.8
V_OL
Output Low Voltage; NOTE 1 Q17:Q19
V_DDO = 2.625V±5%
NOTE 1: Outputs terminated with 50Ω to V_DDO/2. See Parameter Measurement Information,
Output Load Test Circuit diagram.
V
0.5
V
IDT^™ / ICS^™ LVDS/LVCMOS FREQUENCY SYNTHESIZER
3
ICS844020-45 REV A JUNE 14, 2006