ICS830S21I Datasheet, PDF (3/11 Pages) Integrated Device Technology – 1-TO-1 2.5V, 3.3V DIFFERENTIAL-TOLVCMOS/LVTTL TRANSLATOR

ICS830S21I
1-TO-1, 2.5V, 3.3V DIFFERENTIAL-TO-LVCMOS/LVTTL TRANSLATOR
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
Item
Supply Voltage, V_DD
Inputs, V_I
Outputs, V_O
Package Thermal Impedance, θ_JA
Storage Temperature, T_STG
Rating
4.6V
-0.5V to V_DD + 0.5V
-0.5V to V_DD + 0.5V
93.1°C/W (0 mps)
-65°C to 150°C
DC Electrical Characteristics
Table 3A. Power Supply DC Characteristics, V_DD = 3.3V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
V_DD
Positive Supply Voltage
I_DD
Power Supply Current
3.135
Typical
3.3
Maximum
3.465
12
Units
V
mA
Table 3B. Power Supply DC Characteristics, V_DD = 2.5V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
V_DD
Positive Supply Voltage
I_DD
Power Supply Current
2.375
Typical
2.5
Maximum
2.625
11
Units
V
mA
Table 3C. LVCMOS/LVTTL DC Characteristics, V_DD = 3.3V ± 5% or 2.5V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
Units
V_OH
Output High Voltage; NOTE 1
V_DD = 3.3V
2.6
V_DD = 2.5V
1.8
V_OL
Output Low Voltage; NOTE 1
V_DD = 3.3V or 2.5V
V
V
0.5
V
NOTE 1: Outputs terminated with 50Ω to V_DD/2. See Parameter Measurement Information, Output Load Test Circuit diagrams.
IDT™ / ICS™ LVCMOS/LVTTL TRANSLATOR
3
ICS830S21AMI REV. A MARCH 21, 2008