840N021 Datasheet, PDF (3/13 Pages) Integrated Device Technology – FemtoClock NG Crystal-to-LVCMOS/LVTTL Clock

840N021 DATA SHEET
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC
Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.
Item
Supply Voltage, V_DD
Inputs, V_I
XTAL_IN
Other Inputs
Outputs, V_O
Package Thermal Impedance, _JA
Storage Temperature, T_STG
Rating
3.63V
0V to 2V
-0.5V to V_DD + 0.5V
-0.5V to V_DD + 0.5V
117°C/W (0 mps)
-65C to 150C
DC Electrical Characteristics
Table 3A. Power Supply DC Characteristics, V_DD = 3.3V±5% or 2.5V±5%, T_A = -40°C to 85°C
Symbol
Parameter
Test Conditions
Minimum
Typical
V_DD
V_DDA
V_DDA
I_DDA
I_DD
Core Supply Voltage
Analog Supply Voltage
Analog Supply Voltage
Analog Supply Current
Power Supply Current
2.375
3.3
V_DD – 0.18
3.3
V_DD – 0.18
2.5
Maximum
3.465
V_DD
V_DD
18
67
Units
V
V
V
mA
mA
Table 3B. LVCMOS/LVTTL DC Characteristics, V_DD = 3.3V±5% or 2.5V±5%, T_A = -40°C to 85°C
Symbol
Parameter
Test Conditions
Minimum
Typical
V_IH
Input High Voltage
V_DD = 3.3V
2
V_DD = 2.5V
1.7
V_IL
Input Low Voltage
V_DD = 3.3V
-0.3
V_DD = 2.5V
-0.3
I_IH
Input High Current OE
V_DD = V_IN = 3.465V or 2.625V
I_IL
Input Low Current OE
V_DD = 3.465V or 2.625V,
V_IN = 0V
-150
V_OH
Output High
Voltage; NOTE 1
Q
V_DD = 3.465V
V_DD = 2.625V
2.6
1.8
V_OL
Output Low Voltage;
NOTE 1
Q
V_DD = 3.465V or 2.625V
NOTE 1: Output terminated with 50 to V_DD / 2. See Parameter Measurement Information Section,
LVCMOS Output Load Test Circuit Diagrams.
Maximum
V_DD + 0.3
V_DD + 0.3
0.8
0.7
5
0.5
Units
V
V
V
V
μA
μA
V
V
V
FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK
3
SYNTHESIZER
REVISION A 8/14/15