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9LPRS436C Datasheet, PDF (10/20 Pages) Integrated Device Technology – Low Power Clock for Intel Atom®-Based Systems
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9LPRS436C
Low Power Clock for Intel Atom®-Based Systems
Electrical Characteristics - USB48MHz, 12/48MHz
PARAMETER
SYMBOL
Long Accuracy
ppm
Clock period
Tperiod
Absolute min/max period
Tabs
Output High Voltage
VOH
Output Low Voltage
VOL
Rising Edge Slew Rate (USB48M)
tSLR
Falling Edge Slew Rate (USB48M)
tF LR
Rising Edge Slew Rate (12/48M)
tSLR
Falling Edge Slew Rate (12/48M)
tF LR
Duty Cycle
d t1
Jitter, Cycle to cycle
tjcyc-cyc
Electrical Characteristics - 25MHz
PARAMETER
Long Accuracy
Clock period
Absolute min/max period
Output High Voltage
Output Low Voltage
Rising Edge Slew Rate
Falling Edge Slew Rate
Duty Cycle
Jitter, Cycle to cycle
SYMBOL
ppm
Tperiod
Tabs
VOH
VOL
tSLR
tF LR
d t1
tjcyc-cyc
CON DITIONS
see Tperiod min-max values
48.00MHz output nominal
48.00MHz output nominal
IOH = -1 mA
IOL = 1 mA
Measured from 0.8 to 2.0 V
Measured from 2.0 to 0.8 V
Measured from 0.8 to 2.0 V
Measured from 2.0 to 0.8 V
VT = 1.5 V
VT = 1.5 V
CON DITIONS
see Tperiod min-max values
25.00MHz output nominal
25.00MHz output nominal
IOH = -1 mA
IOL = 1 mA
Measured from 0.8 to 2.0 V
Measured from 2.0 to 0.8 V
VT = 1.5 V
VT = 1.5 V
Electrical Characteristics - 12.288MHz
PARAMETER
Long Accuracy
Clock period
Absolute min/max period
Output High Voltage
Output Low Voltage
Rising Edge Slew Rate
Falling Edge Slew Rate
Duty Cycle
Jitter, Cycle to cycle
SYMBOL
ppm
Tperiod
Tabs
VOH
VOL
tSLR
tF LR
d t1
tjcyc-cyc
CON DITIONS
see Tperiod min-max values
12.288MHz output nominal
12.288MHz output nominal
IOH = -1 mA
IOL = 1 mA
Measured from 0.8 to 2.0 V
Measured from 2.0 to 0.8 V
VT = 1.5 V
VT = 1.5 V
Electrical Characteristics - REF-14.318MHz
PARAMETER
Long Accuracy
SYMBOL
ppm
C OND ITIONS
see Tperiod min-max values
Clock period
Absolute min/max period
Tp eriod
Tabs
14.318MHz output nominal
14.318MHz output nominal
Output High Voltage
VOH
IOH = -1 mA
Output Low Voltage
VOL
IOL = 1 mA
Rising Edge Slew Rate
tSLR
Measured from 0.8 to 2.0 V
Falling Edge Slew Rate
Duty Cycle
tFL R
dt1
Measured from 2.0 to 0.8 V
VT = 1.5 V
Jitter, Cycle to cycle
tjcyc-cyc
VT = 1.5 V
*TA = Tambient; VDD = 3.3 V +/-5%; CL=5pF, Rs= 22Ω (unless specified otherwise)
1 Guaranteed by design and characterization, not 100% tested in p rod uction.
2 All Long Term Accuracy and Clock Period specifications are guaranteed assuming that REFOUT is at 14.31818MHz
3 The average period over any 1us period of time
Electrical Characteristics - Phase Jitter
PARAMETER
SYMBOL
CON DITIO NS
tjp hPCIe1
PCIe Gen 1 REFCLK phase jitter
Jitter, Phase
tjph PCIe2L o
PCIe Gen 2 REFCLK phase jitter
Lo-band content
tjphPC Ie2Hi
PCIe Gen 2 REFCLK phase jitter
Hi-band content
*TA = Tambient; VDD = 3.3 V +/-5%; CL=5pF, Rs=22Ω (unless specified otherwise)
Notes on Phase Jitter:
1 See http://www.pcisig.com for complete specs. Guaranteed by design and characterization, not tested in production.
2 Device driven by 932S421BGLF or equivalent
2 Sample size of at least 100K cycles. This figures extrapolates to 108ps pk-pk @ 1M cycles for a B ER of 1-12
3 Applies to PCIEX(3:0) outputs only.
IDT® Low Power Clock for Intel Atom®-Based Systems
10
M IN
TYP
-10 0
20 .8312 5
20 .4812 5
2.4
1
1.7
1
1.7
1
1.7
1
1.7
45
50.6
15 0
MAX
100
20.8 3542
21.1 8542
0 .4
2
2
2
2
55
350
UNITS NOTES
ppm 1,2
ns
2, 3
ns
2
V
1
V
1
V/ns
1
V/ns
1
V/ns
1
V/ns
1
%
1
ps
1
M IN
TYP
-10 0
0
39 .9960 0
39 .3236 0
2.4
1
1.8
1
1.8
45
49.6
15 0
MAX
100
40.0 0400
40.6 7640
0 .4
2
2
55
500
UNITS NOTES
ppm 1,2
ns
2, 3
ns
2
V
1
V
1
V/ns
1
V/ns
1
%
1
ps
1
M IN
TYP
-10 0
0
81 .3720 7
80 .8720 7
2.4
1
1.8
1
1.8
45
50.1
13 3
MAX
100
81.3 8835
81.8 8835
0 .4
2
2
55
500
UNITS NOTES
ppm 1,2
ns
2, 3
ns
2
V
1
V
1
V/ns
1
V/ns
1
%
1
ps
1
M IN
TYP
-10 0
0
69 .8203 3
69 .8340 0
2.4
1
1.5
1
1.4
45
50.2
13 9
MAX
100
69.8 6224
70.8 4800
0 .4
4
4
55
1000
UNITS
ppm
ns
ns
V
V
V/ns
V/ns
%
ps
No tes
1, 2
2, 3
2
1
1
1
1
1
1
MIN TYP. MAX UNITS NOTES
30
86
ps 1,2,3
ps
1.3
3
(RMS) 1,2,3
ps
1.7
3 .1
(RMS) 1,2,3
1561C — 08/24/11
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