IC41C16100A Datasheet, PDF (6/21 Pages) Integrated Circuit Solution Inc – 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IC41C16100A/IC41C16100AS
IC41LV16100A/IC41LV16100AS
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameters
Rating Unit
VT
Voltage on Any Pin Relative to GND
5V –1.0 to +7.0 V
3.3V –0.5 to +4.6
VCC
Supply Voltage
5V
3.3V
–1.0 to +7.0 V
–0.5 to +4.6
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature
0 to +70 °C
TSTG
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
Parameter
Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
TA
Commercial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min. Typ.
Max.
Unit
4.5 5.0
5.5
V
3.0 3.3
3.6
2.4
— VCC + 1.0
V
2.0
— VCC + 0.3
–1.0 —
0.8
V
–0.3 —
0.8
0
—
70
°C
CAPACITANCE^(1,2)
Symbol
CIN1
CIN2
CIO
Parameter
Input Capacitance: A0-A9
Input Capacitance: RAS, UCAS, LCAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O15
Max.
Unit
5
pF
7
pF
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
6
Integrated Circuit Solution Inc.
DR030-0A 09/28/2001