IC62LV1024AL Datasheet, PDF (4/11 Pages) Integrated Circuit Solution Inc – 128K x 8 Ultra Low Power and Low VCC SRAM

IC62LV1024AL
IC62LV1024ALL
TRUTH TABLE
Mode
WE
Not Selected X
(Power-down) X
Output Disabled H
Read
H
Write
L
CE1
H
X
L
L
L
CE2 OE
XX
LX
HH
HL
HX
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB1, ISB2
ISB1, ISB2
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND
–0.5 to +3.6
V
VCC
Vcc related to GND
–0.3 to +3.6
V
TBIAS
Temperature Under Bias
–40 to +85
°C
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
0.7
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE^(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage VCC = Min., IOH = –1.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Min.
Max.
Unit
2.2
—
V
—
0.4
V
2.2 VCC + 0.3
V
–0.3
0.4
V
–1
1
µA
–1
1
µA
4
Integrated Circuit Solution Inc.
LPSR017-0A 09/13/2001