IC62LV1024AL Datasheet, PDF (2/11 Pages) Integrated Circuit Solution Inc – 128K x 8 Ultra Low Power and Low VCC SRAM

IC62LV1024AL
IC62LV1024ALL
128K x 8 LOW POWER and LOW Vcc
CMOS STATIC RAM
FEATURES
• Access times of 45, 55, and 70 ns
• Low active power: 60 mW (typical)
• Low standby power: 15 µW (typical) CMOS
standby
• Low data retention voltage: 2V (min.)
• Available in Low Power (-L) and
Ultra Low Power (-LL)
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Single 2.7V to 3.3V power supply
DESCRIPTION
The ICSI IC62LV1024AL and IC62LV1024ALL are low power
and low Vcc,131,072-word by 8-bit CMOS static RAMs. They
are fabricated using ICSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low power
consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IC62LV1024AL and IC62LV1024ALL are available in 32-pin
8*20mm TSOP-1, 8*13.4mm TSOP-1, 450mil SOP and 48-pin
6*8mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
VCC
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
512 X 2048
MEMORY ARRAY
COLUMN I/O
CE1
CE2
CONTROL
OE
CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
LPSR017-0A 09/13/2001