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IC-DI Datasheet, PDF (9/15 Pages) IC-Haus GmbH – DUAL SENSOR INTERFACE
iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 9/15
ELECTRICAL CHARACTERISTICS
Operating Conditions:
VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated
Item Symbol Parameter
No.
Conditions
Min. Typ.
902 Ia(VHL)
max. DC Cut-Off Current from
VHL
-200
903 Va(VH) Cut-Off Voltage at VH
Va(VH) > VHn
6.5 7.3
904 Va()hys Hysteresis at VH
10
25
905 Vs(VHL) Saturation Voltage at VHL vs.
VBR
I(VHL) = -50 mA
I(VHL) = -150 mA
906 Vf(VHL) Forward Voltage of Fly-Back
Diode
Vf() = V(GND) − V(VHL);
I(VHL) = -50 mA
I(VHL) = -150 mA
907 Ilk(VHL) Leakage Current at VHL
VHL = lo, V(VHL) = V(VH)
-20
908 ηVH
Efficiency of VH-switching regula- I(VH) = 50 mA, Ri(LVH) < 1.1 Ω,
70
tor
V(VBR) = 12...30 V
Series Regulator VCC
A01 VCCn
Nominal Voltage at VCC
I(VCC) = -50...0 mA, VH = VHn
4.75
5
A02 CVCC
Required Capacitor at VCC vs.
150
GND
A03 RiCVCC Maximum Permissible Internal
Resisitance of capacitor at VCC
A04 VCCon VCC Monitor Threshold hi
90
A05 VCCoff VCC Monitor Threshold lo
Decreasing Voltage at VCC
83
A06 VCChys Hysteresis
VCChys = VCCon − VCCoff
50 150
Series Regulator VCC3
B01 VCC3n Nominal Voltage at VCC3
I(VCC3) = -50...0 mA, VH = VHn
3.1 3.3
B02 CVCC3 Required Capacitor at VCC3 vs.
150
GND
B03 RiCVCC3 Maximum Permissible Internal
Resisitance of capacitor at VCC3
B04 VCC3on VCC3 Monitor Threshold hi
90
B05 VCC3off VCC3 Monitor Threshold lo
Decreasing Voltage at VCC3
83
B06 VCC3hys
Oscillator
C01 fos
Hysteresis
Oscillator Frequency
Reference and Bias
D01 V(ISET) Voltage at ISET
D02 I(ISET) Current in ISET
D03 rIbeg
Transmission Ratio for driver
output current limitation
VCC3hys = VCC3on − VCC3off
Tj = 27 °C
Tj = 27 °C
V(ISET) = 0 V, Tj = 27 °C
Imax(QP1) = Imax(QP2) = Imax(QN1) =
Imax(QN2) = I(ISET) ∗ rIbeg,
RSET = 5.1...20 kΩ
50 150
1.2
2
1.5
1.16 1.22
-1.1 -0.65
800
Unit
Max.
mA
7.7
V
150 mV
1.1
V
3.0
V
1.5
V
2.9
V
20
µA
%
5.25
V
nF
1
Ω
99 %VCCn
95 %VCCn
mV
3.5
V
nF
1
Ω
98
%
VCC3n
95
%
VCC3n
mV
2.75 MHz
2.3 MHz
1.28
V
-0.25 mA