IC-DI Datasheet, PDF (6/15 Pages) IC-Haus GmbH – DUAL SENSOR INTERFACE

iC-DI
DUAL SENSOR INTERFACE
Rev C2, Page 6/15
ELECTRICAL CHARACTERISTICS
Operating Conditions:
VBO = 9...30 V, VBR = 9...30 V (both referenced to VN), Tj = -40...125 °C, RSET = 8.2 kΩ ±1%, unless otherwise stated
Item Symbol Parameter
No.
Conditions
Min. Typ.
Total Device
001 VBO
Permissible Supply Voltage
Referenced to VN
9
24
002 I(VBO) Supply Current in VBO
No load, I(QP1) = I(QP2) = 0, HSx switched on
003 VBR
Permissible Supply Voltage
9
24
004 I(VBR) Supply Current in VBR
VH connected to VBR, no load,
I(VCC) = I(VCC3) = 0, V(OEN) = hi
005 Vc()hi
Clamp Voltage hi at VBO, VBR I() = 10 mA
36
vs. VN
006 Vc()lo
Clamp Voltage lo at VBO, VBR I() = -10 mA
vs. VN
007 Vc()hi
Clamp Voltage hi at QN1, QN2 I() = 1 mA, VBO and VBR > VN
36
vs. VN
008 Vc()lo
Clamp Voltage lo at QP1, QP2 I() = -1 mA, VBO and VBR > VN
-9
vs. VN
009 Vc(CFI)hi Clamp Voltage hi at CFI vs. VN I() = 1 mA
36
010 Vc(CFI)lo Clamp Voltage lo at CFI vs. VN I() = -1 mA
011 Vc(VN)hi Clamp Voltage hi at VN vs. low- I() = 1 mA
36
est voltage of QP1, QN1, QP2,
QN1, CFI
012 Vc()hi
Clamp Voltage hi at VH, VHL I() = 1 mA
36
013 Vc()lo
Clamp Voltage lo at VH, VHL I() = -1 mA
014 Vc()hi
Clamp Voltage hi at VCC, VCC3, I() = 1 mA
7
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
015 Vc()lo
Clamp Voltage lo at VCC, VCC3, I() = -1 mA
ISET, INV1, IN1, IN2, QCFG1,
QCFG2, OEN, CFO, CFP, NOVL,
NUVD
016 tpio
Propagation Delay
2.4
IN1 → QP1, QN1
IN2 → QP2, QN2
017 R(GND)off Resistance of GND switch
VBO < VN (reverse bias)
10
018 R(GND)on Resistance of GND switch
VBO > VN; V(GND) < VN + 0.6V
Low-Side Switch QN1, QN2; V(QCFG1) = V(QCFG2) = 0 V
101 Vs()lo
Saturation Voltage lo at QN1,
QN2 vs. VN
RSET = 5.1 kΩ;
I() = 100 mA
I() = 50 mA
I() = 10 mA
102 Isc()lo
Short-Circuit Current lo in QN1, RSET = 8.2 kΩ, V() = 1.4 V...VBO
QN2
100 125
103 Vol()on Overload Detection Threshold on QN1, QN2 lo → hi; referenced to GND
1.55
104 Vol()off Overload Detection Threshold off QN1, QN2 hi → lo; referenced to GND
1.5
105 Vol()hys Overload Detection Threshold Vol()hys = Vol()on − Vol()off
0.1
Hysteresis
106 llk()
Leakage Current at QN1, QN2
OEN = lo;
V(QN1, QN2) = VBO...VBO + 6 V
V(QN1, QN2) = 0...VBO
V(QN1, QN2) = -6...0 V
0
0
-500
107 SR()
Slew Rate (switch off → on)
VBO = 30 V, Cl = 2.2 nF
108 Imax()
Maximum Current in QN1, QN2 V(ISET) = 0 V, QNx > 3 V
195 300
109 Ir()
Reverse Current in QN1, QN2 QNx activated; V(QNx) = -6 V
-10
Max.
30
0.3
30
6
-36
39
-6
-36
-36
-0.5
11
20
1.5
1
0.3
160
2.1
1.8
50
50
0
45
450
Unit
V
mA
V
mA
V
V
V
V
V
V
V
V
V
V
V
µs
kΩ
Ω
V
V
V
mA
V
V
V
µA
µA
µA
V/µs
mA
mA