IC-TW11 Datasheet, PDF (7/25 Pages) IC-Haus GmbH – 10-BIT ULTRA LOW POWER MAGNETIC ABSOLUTE ROTARY ENCODER

iC-TW11 10-BIT ULTRA LOW POWER^preliminary
MAGNETIC ABSOLUTE ROTARY ENCODER
Rev B1, Page 7/25
ELECTRICAL CHARACTERISTICS
Operating conditions: V_CORE = 3.0 to 3.6 V, V_IO = 1.7 to V_CORE, Tj = -40 to +125 °C.
Item Symbol Parameter
No.
Conditions
Total Device
001 V_CORE Main Supply Voltage
002 V_IO
I/O Supply Voltage
003 I(V_CORE) Main Supply Current
004 I(V_CORE) Main Supply Current,
normal mode
005 I(V_CORE) Main Supply Current,
low power mode
006 I(V_CORE) Main Supply Current,
sleep mode
xRST high and conversion in progress (see
Elec. Char. 105), not including I/O current
CONFIG.lpwr = 0, not including I/O current;
fs = 10 Hz
fs = 1 kHz
fs = 4 kHz
CONFIG.lpwr = 1, not including I/O current;
fs = 10 Hz
fs = 1 kHz
fs = 20 kHz
xRST low or no conversion in progress, not
including I/O current;
Tj = 25 °C
Tj = 125 °C
Hall Sensors and Angle Calculation
101 Hext
Permissible Magnetic Field
Strength
at chip surface
102 dsens
103 RES
Diameter of Hall Sensor Circle
Angle Resolution
104 AAabs Absolute Angle Accuracy
105 tconv
Conversion Time
Bomatec BMN-35H diametric NdFeB magnet
of Ø4x4mm, centered on package at 0.5 mm
airgap, quasi static
normal mode: CONFIG.lpwr = 0
low power mode: CONFIG.lpwr = 1
Digital Inputs (SI, IRQ_IN, SCLK, xSS, SAMPLE, xRST)
301 Vt()hi
Threshold Voltage hi
V(V_IO) = 3.0...3.6 V
V(V_IO) = 1.7...2.0 V
302 Vt()lo
Threshold Voltage lo
V(V_IO) = 3.0...3.6 V
V(V_IO) = 1.7...2.0 V
303 fin(SCLK) Permissible Clock Frequency at
SCLK Pin
304 tw
Permissible Pulse Width at
(SAMPLE) SAMPLE Pin
Digital Outputs (SO, IRQ_OUT)
401 Vs()hi
Saturation Voltage hi
402 Vs()lo
Saturation Voltage lo
Vs()hi = V(V_IO) − V();
V(V_IO) > 3.0 V, I() = -4 mA
V(V_IO) > 1.7 V, I() = -2 mA
V(V_IO) > 3.0 V, I() = 4 mA
V(V_IO) > 1.7 V, I() = 2 mA
Reset and Start-Up
501 tstart
Startup Time
device operational after xRST lo → hi
Unit
Min. Typ. Max.
3.0 3.3 3.6
V
1.7
1.8 V_CORE V
10
mA
21
µA
2100
µA
8200
µA
2.6
µA
260
µA
5200
µA
100 nA
1000 nA
25
150 kA/m
2
mm
10
bits
±1
°
225 300
µs
40
54
µs
2.48
V
1.44
V
0.82
V
0.36
V
16 MHz
10
ns
0.8
V
0.7
V
0.4
V
0.4
V
1
µs