IC-MA Datasheet, PDF (5/18 Pages) IC-Haus GmbH – ANGULAR HALL SENSOR / ENCODER

iC-MA
ANGULAR HALL SENSOR / ENCODER
Rev B3, Page 5/18
ELECTRICAL CHARACTERISTICS
Operating conditions: VDD = 5 V ±10 % , Tj = -40 ... 125 °C, unless otherwise noted
Item Symbol Parameter
No.
Conditions
General
001 VDD
Supply voltage
002 I(VDD) Supply current
open pins, normal operation
open pins, power reduction mode (PRM)
003 I(VDD)sb Standby supply current
NEN = VDD
004 td(VDD)on Turn on delay
VDD > 4 V, see figure 6
005 td(VDD)off Turn off delay
VDD < 2.6 V
Hall sensor array
101 Hext
Requiered external magnetic field at chip surface
strength
102 dsens
Diameter of Hall sensor array see figure 1
103 xdis
Displacement of Hall sensor
array to package
DFN10 package, see figure 1
104 Φdis
Angular displacement of chip with DFN10 package
reference to package
105 hsens
Distance chip surface to top of DFN10 package
package
106 Aabs
Absolute angular position
Using magnet with 4 mm diameter, centered to
chip, Hext = 20...100 kA/m
Signal conditioning
201 Voff
Offset voltage
on output, with external magnetic field ampli-
tude of 20 kA/m
202 TC(Voff) Temperatur coefficient of offset
voltage
203 Vdc
Output mean value
204 Ratio
Amplitude ratio of SIN / COS
205 fhc
Cut off frequency
206 t()settle Settling time
to 70 % amplitude, Hext = 40 kA/m
207 V()gain Gain output voltage
208 V()ampl Sine/Cosine amplitude
V()ampl = V()max - Vdc
Sine-to-digital converter
301 AArel
Relative angular error
with reference to one periode, see fig. 2
302 f(OSC) Oscillator frequency
303 TC(OSC) Temperature coefficient of oscilla-
tor frequency
304 hys
Converter hysteresis
Configuration inputs CFG1, CFG2, CFG3
401 Vt()hi
Threshold voltage high
402 Vt()lo
Threshold voltage low
403 V0()
Open circuit voltage
404 Ri()
Input resistance
Enable input NEN
501 Vt()hi
Threshold voltage high
502 Vt()lo
Threshold voltage low
503 Vt()hys Hysteresis
Vt()hys = Vt()hi - Vt()lo
504 Ipu()
Pull-up current
V() = 0...VDD - 1 V
Digital outputs: A, B, C, D
601 Vs()hi
Saturation voltage high
Vs()hi = VDD - V(), I() = -4 mA
602 Vs()lo
Saturation voltage low
I() = 4 mA
603 tr()
Rise time
CL() = 50 pF
604 tf()
Fall time
CL() = 50 pF
605 Ilk()
Leackage current
NEN = high, V() = 0 ... VDD
Min.
4.5
20
-0.2
-3
-3
-50
-50
45
0.95
0.05
0.9
-20
200
60
25
43
45
0.8
100
-240
-5
Typ.
5
14
7
10
10
50
2
400
50
1.00
20
80
1.0
256
-0.1
1
150
-120
Unit
Max.
5.5
V
21
mA
14
mA
200 µA
µs
µs
100 kA/m
mm
0.2 mm
3
DEG
µm
3
DEG
50
mV
50 µV/K
55 %VDD
1.05
kHz
150
µs
4.0
V
1.1
V
20
%
300 kHz
%/K
LSB
78 % VDD
40 % VDD
57 % VDD
750 kΩ
2
V
V
250 mV
-25
µA
0.4
V
0.4
V
60
ns
60
ns
5
µA