IC-HB_13 Datasheet, PDF (5/8 Pages) IC-Haus GmbH – TRIPLE 155MHz LASER SWITCH

iC-HB
TRIPLE 155 MHz LASER SWITCH
Rev A4, Page 5/8
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.5...5.5 V, VTTL = 3.15...5.5 V, Tj = -25...125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
118 Vt(EPx)hi Input Threshold Voltage hi at
EP1, EP2, EPB
TTL = hi, ENx = open
2
V
119 Vt(EPx)lo Input Threshold Voltage low at TTL = hi, ENx = open
0.8
EP1, EP2, EPB
120 Vhys(EPx) Hysteresis
20
mV
121 Vt(CIx)
Threshold Voltage at CI1, CI2, I(LDKx) < 5 mA
CIB
0.9
1.4
V
122 CR()
Current Matching Chan-
V(CI1) = V(CI2) = 0...VDD, I(LDKx) =
0.9
1.1
nel1 / Channel2
30...300 mA
123 I(NER) Current in NER
Tj > Toff, V(NER) > 0.6 V
1
20
mA
124 Vsat(NER) Saturation Voltage at NER
Tj > Toff, I(NER) = 1 mA
600 mV
125 Vs(SYNx)hi Saturation Voltage hi at SYN1, Vs(SYNx)hi = VDD − V(SYNx), I() = -1 mA,
SYN2, SYNB
V(EPx) < V(ENx)
0.4
V
126 Vs(SYNx)lo Saturation Voltage lo at SYN1, I() = 1 mA, V(EPx) > V(ENx)
SYN2, SYNB
0.4
V
127 Isc(SYNx)hi Short-Circuit Current hi at SYN1, V(EPx) < V(ENx), V(SYNx) = 0 V, VTTL = 3.3 V -20
SYN2, SYNB
-3
mA
128 Isc(SYNx)lo Short-Circuit Current lo at SYN1, V(EPx) > V(ENx), V(SYNx) = VTTL,
SYN2, SYNB
VTTL = 3.3 V
3
20
mA
ELECTRICAL CHARACTERISTICS DIAGRAMS
I(LDK)
t_r
t_f
I _op
90 % I _op
10 % I _op
t
Figure 1: Laser current pulse in LDK