English
Language : 

IC-HB_13 Datasheet, PDF (4/8 Pages) IC-Haus GmbH – TRIPLE 155MHz LASER SWITCH
iC-HB
TRIPLE 155 MHz LASER SWITCH
Rev A4, Page 4/8
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.5...5.5 V, VTTL = 3.15...5.5 V, Tj = -25...125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
Min.
Total Device
001 VDD
Permissible Supply Voltage
3.5
002 VTTL
Permissible Supply Voltage at
3.15
VTTL
003 I(VDD) Supply Current in VDD
CW operation
2
004 I(VDD) Supply Current in VDD
pulsed operation, f(ENx, EPx) = 150 MHz
005 I(VTTL) Supply Current in VTTL
006 V(LDKx) Permissible Voltage at LDK1,
0
LDK2, LDKB
007 Vc(CIx)hi Clamp Voltage hi at CI1, CI2, CIB Vc(CIx) = V(CIx) − VDD, I(CIx) = 10 mA, other 0.4
pins open
008 Vc(TTL)hi Clamp Voltage hi at TTL
Vc(TTL)hi = V(TTL) − VDD, I(TLL) = 0.1 mA,
0.4
other pins open
009 Vc(SYNx)hi Clamp Voltage hi at SYN1,
SYN2, SYNB
Vc(SYNx)hi = V(SYNx) − VTTL, I(EN) = 1 mA, 0.4
other pins open
010 Vc()lo
Clamp Voltage lo at VDD, LDK,
CI1, CI2, CIB, EN1, EN2, ENB,
EP1, EP2, EPB, TTL, AGND1,
AGND2, AGNDB, NER, VTTL,
SYN1, SYN2, SYNB, IMON
I() = -10 mA, other pins open
-1.25
011 Ipd()
Pull-Down Current at CI1, CI2, V() = 0.7...5.5 V
0.5
CIB, TTL
012 Ipd(EPx) Pull-Down Current at EP1, EP2, TLL = hi, V() = 0.7...5.5 V
0.5
EPB
013 Toff
Overtemperature Shutdown
120
Laser Control
101 Icw(LDKx) Permissible CW Current in LDK1,
LDK2
102 Icw(LDKB) Permissible CW Current in LDKB
103 Ipk(LDKx) Permissible Pulsed Current in
LDK1, LDK2
f > 100 kHz, thi / T < 1:10
104 Ipk(LDKB) Permissible Pulsed Current in
LDKB
f > 100 kHz, thi / T < 1:10
105 Vsat(LKDx) Saturation Voltage at LKD1,
LKD2, LDKB
I(LDKx) = 30 mA
I(LDKx) = 60 mA
106 Imon() Switching Channels 1, 2
V(IMON) > 1.5 V, V(LDKx) > 1.5 V
1/105
107 Imon() Bias Channel
V(IMON) > 1.5 V, V(LDKx) > 1.5 V
1/80
108 I0(LDKx) Leakage Current in LDK1, LDK2, V(EPx) < V(ENx), V(LDKx) = VDD
0
LDKB
109 tr()
Current Rise Time at LDK1,
LDK2, LDKB
Iop(LDKx) = 55 mA, I(LDKx): 10% → 90%Iop,
cf. Fig. 1
110 tf()
Current Fall Time at LDK1, LDK2, Iop(LDKx) = 55 mA, I(LDKx): 90% → 10%Iop,
LDKB
cf. Fig. 1
111 tp()
Propagation Delay
V(EPx, ENx) → I(LDKx)
112 Vcm()
Common Mode Input Voltage TLL = lo;
Range at ENx, EPx
VDD = 3.5...5.5 V
0.8
VDD = 4.5...5.5 V
0.6
113 Vd()
Input Differential Voltage at ENx, TLL = lo
EPx
-100
114 R()
Differential Input Impedance at TLL = lo,
0.6
ENx, EPx
V(ENx) < VDD − 2 V, V(EPx) < VDD − 2 V
115 Vt(TTL)hi Input Threshold Voltage hi
116 Vt(TTL)lo Input Threshold Voltage low
VDD = 5 V
0.8
117 Vhys(TTL) Hysteresis
Typ.
10
100
Unit
Max.
5.5
V
5.5
8
mA
80
mA
1
mA
5.5
V
1.25
V
1.25
V
1.25
V
-0.4
V
5
µA
5
µA
165
°C
65
mA
60
mA
300 mA
275 mA
0.8
V
1.2
V
1/85 I(LDKx)
1/70 I(LDKB)
10
µA
1.5
ns
1.5
ns
ns
2.3
V
2.3
V
100 mV
3
kΩ
2
V
V
mV