IC-PMX Datasheet, PDF (12/27 Pages) IC-Haus GmbH – ENERGY HARVESTING MULTITURN COUNTER/ENCODER

iC-PMX
ENERGY HARVESTING MULTITURN COUNTER/ENCODER
Rev A3, Page 12/27
ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC = 4.5...5.5 V, VUP = 3.0...VCC, Tj = -40 °C...125 °C, INT calibrated to 100 µA, unless otherwise noted
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
Inputs NCS, SCK, MOSI, SH
D01 Vt()lo
Threshold Voltage lo
20
%VUP
D02 Vt()hi
Threshold Voltage hi
80 %VUP
D03 Vt()hys Threshold Voltage Hysteresis
200
mV
D04 Ipd()
Pull-Down Current
V() = 1.5V...VUP
4
35
70
µA
D05 Ipu()
Pull-Up Current for NCS
V() = 0V...VUP-1.5V
-70 -35
-5
µA
Outputs MISO, RDY
E01 Vs()hi
Saturation Voltage hi
Vs() = VUP - V();I() = -2.8 mA
400 mV
E02 Vs()lo
Saturation Voltage lo
I() = 2.8 mA
400 mV
E03 tr()
Rise Time
C = 50 pF to GND (20% to 80% V(VUP)
30
ns
E04 tf()
Fall Time
C = 50 pF to VUP (80% to 20% V(VUP)
30
ns
E05 Ipd()
Pull-Down Current MISO
Timing Parameter SPI Slave Interface
MISO inactive, V() = 1.5V...VUP
NCS
SCK
MOSI
ts(NCS)
ts(MOSI)
MSB
th(MOSI)
thi(SCK)
tlo(SCK)
LSB
td(MISO)
MISO
MSB
F01 tpu()
Hold time at power on
F02 f()
SCK: Clock Frequency
F03 ts()
MOSI,NCS: Setup Time to Rising
Edge of SCK
F04 th(MOSI) MOSI: Hold Time after Rising
Edge of SCK
F05 td(MISO) MISO: Data Valid after Falling C = 50 pF to GND
Edge of SCK
F06 tlo(SCK) SCK High Time
F07 thi(SCK) SCK Low Time
F08 th(NCS) NCS: Hold Time after Rising
Edge of SCK
F09 thi(NCS) NCS High Time
F10 tlo(SH) SH Low Time
F11 thi(SH) SH High Time
F12 th(SH)
SH: Hold Time after Rising Edge
of NCS
F13 th(NCS,SH) NCS: Hold Time after Change of
SH
4
35
70
µA
th(NCS) thi(NCS)
LSB
10
25
3
0
25
25
25
200
100
100
100
100
µs
20 MHz
ns
ns
75
ns
ns
ns
ns
ns
ns
ns
ns
ns