ICE20N170U Datasheet, PDF (5/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

10000
1000
100
Capacitance
Ciss
Coss
Preliminary Data Sheet
ICE20N170U
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
I_D = 1mA
1.0
10
Crss
1
0
100 200 300 400 500 600
V_DS - Drain-to-Source Voltage (V)
Maximum Rated Forward Biased Safe Operating Area
100
10
Single Pulse,
Tc = 25^oC,
T_j=150^oC,
V_GS = 10V
10us
100us
1
0.1
R_DS(on) Limit
Package Limit
Thermal Limit
1ms
10ms
DC
0.01
1
10
100
V_DS - Drain-to-Source Voltage (V)
1000
0.9
0.8
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (˚C)
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (s)
SP-20N170U-000-2
05/15/2013
5