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ICE20N170U Datasheet, PDF (1/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet
ICE20N170U
ICE20N170U N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS
Product Summary
TA=25oC
ID=250uA
20A
600V
Max
Min
rDS(on) VGS=10V 0.17Ω
Typ
Features
• Low rDS(on)
• Ultra Low Gate Charge
Qg
VDS=480V 62nC
Typ
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
G
• Increased transconductance performance
• Optimized design for high performance power systems
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0262
Standard Metal
Heatsink
1=Gate, 2&4=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=10A
Avalanche current, repetitive
I AR
limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=20A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot
Tc=25oC
Operating and storage temperature
Tj, Tstg
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
20
62
520
20
50
±20
±30
208
-55 to +150
Unit
A
A
mJ
A
V/ns
V
W
oC
SP-20N170U-000-2
05/15/2013
1