ICE20N170U Datasheet, PDF (3/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet
ICE20N170U
Parameter
Symbol
Conditions
Gate charge characteristics
Gate to source charge
Q_gs
Gate to drain charge
Q_gd
Gate charge total
Q_g
Gate plateau voltage
V_plateau
Reverse Diode
Diode forward voltage
V_SD
Reverse recovery time
t_rr
Reverse recovery charge
Q_rr
Peak reverse recovery current I_rm
V_DS=480 V, I_D=20A,
V_GS=10 V
V_GS=0V, I_S=I_F
V_RR=480V, I_S=I_F,
d_iFId_t=100 A/µS
Values
Unit
Min Typ Max
-
13
-
-
23
-
nC
-
62
-
-
5.8
-
V
- 0.9 1.2 V
- 407 -
ns
-
6.7
-
µC
-
32
-
A
SP-20N170U-000-2
05/15/2013
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