HY57V56820B Datasheet, PDF (9/12 Pages) Hynix Semiconductor – 4 Banks x 8M x 8Bit Synchronous DRAM

IBIS SPECIFICATION
IOH Characteristics (Pull-up)
Voltage
(V)
3.45
3.3
3.0
2.6
2.4
2.0
1.8
1.65
1.5
1.4
1.0
0
100MHz
(Min)
I(mA)
0
-21.1
-34.1
-58.7
-67.3
-73
-77.9
-80.8
-88.6
-93
100MHz
(Max)
I(mA)
-2.4
-27.3
-74.1
-129.2
-153.3
-197
-226.2
-248
-269.7
-284.3
-344.5
-502.4
66MHz
(Min)
I(mA)
-0.7
-7.5
-13.3
-27.5
-35.5
-41.1
-47.9
-52.4
-72.5
-93
IOL Characteristics (Pull-down)
Voltage
(V)
0
0.4
0.65
0.85
1.0
1.4
1.5
1.65
1.8
1.95
3.0
3.45
100MHz
(Min)
I(mA)
0
27.5
41.8
51.6
58.0
70.7
72.9
75.4
77.0
77.6
80.3
81.4
100MHz
(Max)
I(mA)
0
70.2
107.5
133.8
151.2
187.7
194.4
202.5
208.6
212.0
219.6
222.6
66MHz
(Min)
I(mA)
0
17.7
26.9
33.3
37.6
46.6
48.0
49.5
50.7
51.5
54.2
54.9
HY57V56820B(L)T
66MHz and 100MHz Pull-up
0
0.5
1
1.5 2
2.5
3
3.5
0
-100
-200
-300
-400
-500
-600
Voltage (V)
IOH Min (100MHz)
IOH Min (66MHz)
IOH Max (66 /100MHz)
66MHz and 100MHz Pull-down
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
3
3.5
Voltage (V)
IOL Min (100MHz)
IOL Min (66MHz)
IOL Max (100MHz)
Rev. 1.4/Mar. 02
9