HYMD512M646BF8-D43 Datasheet, PDF (8/17 Pages) Hynix Semiconductor – 200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)

CAPACITANCE (TA=25^oC, f=100MHz)
1GB : HYMD512M646B[L]F[P]8
Input/Output Pins
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE0, CKE1
/CS0, /CS1
CK0, /CK0, CK1, /CK1, CK2, /CK2
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
200pin Unbuffered DDR SDRAM
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIO1
Min
Max
Unit
50
68
pF
50
68
pF
36
48
pF
36
48
pF
30
38
pF
10
18
pF
10
18
pF
Rev. 1.1 / May. 2005
8