HYMD512M646BF8-D43 Datasheet, PDF (15/17 Pages) Hynix Semiconductor – 200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)

200pin Unbuffered DDR SDRAM
SIMPLIFIED COMMAND TRUTH TABLE
Command
CKEn-1 CKEn /CS /RAS /CAS /WE ADDR A10/AP BA Note
Extended Mode Register Set
H
Mode Register Set
H
Device Deselect
H
No Operation
Bank Active
H
Read
H
Read with Autoprecharge
Write
H
Write with Autoprecharge
Precharge All Banks
H
Precharge selected Bank
Read Burst Stop
H
Auto Refresh
H
Entry
H
Self Refresh
Exit
L
Entry
H
Precharge Power
Down Mode
Exit
L
Active Power Down ^Entry
H
Mode
Exit
L
X
L
L
L
L
OP code
1,2
X
L
L
L
L
OP code
1,2
H
X
X
X
X
X
1
L
H
H
H
X
L
L
H
H
RA
V
1
L
1
X
L
H
L
H
CA
V
H
1,3
L
1
X
L
H
L
L
CA
V
H
1,4
H
X
1,5
X
L
L
H
L
X
L
V
1
X
L
H
H
L
X
1
H
L
L
L
H
X
1
L
L
L
L
H
1
H
X
X
X
X
H
1
L
H
H
H
H
X
X
X
1
L
L
H
H
H
1
X
H
X
X
X
1
H
L
H
H
H
1
H
X
X
X
L
L
V
V
V
1
X
1
H
X
1
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
Note :
1. DM states are Don’t Care. Refer to below Write Mask Truth Table.
2. OP Code(Operand Code) consists of A0~A12 and BA0~BA1 used for Mode Registering during Extended MRS or MRS.
Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP
period from Precharge command.
3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+tRP).
4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+1+tWR+tRP). Write Recovery Time(tWR) is needed to guarantee that the last data has been
completely written.
5. If A10/AP is High when Row Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged.
WRITE MASK TRUTH TABLE
Function
Data Write
Data-In Mask
CKEn-1
H
H
CKEn
X
X
/CS, /RAS, /CAS, /WE
X
X
DM ADDR A10/AP BA
L
X
H
X
Note
1
1
Note:
1. Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data.
In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively.
Rev.
1.1
/
May.
2005
15