HYMD116645B8-M Datasheet, PDF (8/17 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD116645B(L)8-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70 ^oC, Voltage referenced to VSS=0V)
Parameter Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
720 640 640 640 mA
Operating Current
One bank; Active - Read - Precharge;
IDD1
Burst Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per clock
880
800
800 640
mA
cycle
Precharge Power
Down Standby
Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
120
mA
Idle Standby Current
IDD2F
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
once per clock cycle.
VIN=VREF for DQ, DQS and DM
280
mA
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
160
mA
/CS=HIGH; CKE=HIGH; One bank; Active-
Active Standby
Current
IDD3N
Precharge; tRC=tRAS(max); tCK=tCK(min); DQ,
DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per
320
mA
clock cycle
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
1520 1520 1520 1200 mA
Operating Current
IDD4W
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
1520 1520 1520 1200 mA
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
1200 1200 1200 1120 mA
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK=tCK(min)
Normal
Low Power
16
8
mA
mA
Operating Current -
Four Bank Operation
IDD7
Four bank interleaving with BL=4, Refer to the
following page for detailed test condition
2080 2080 2080 1760 mA
Rev. 0.3/May. 02
8