HYMD116645B8-M Datasheet, PDF (7/17 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD116645B(L)8-M/K/H/L
DC CHARACTERISTICS I (TA=0 to 70 ^oC, Voltage referenced to VSS= 0V)
Parameter
Symbol
Min.
Input Leakage
Current
Add, CMD, /CS, /CKE
CK, /CK
ILI
Output Leakage Current
ILO
Output High Voltage
VOH
Output Low Voltage
VOL
-16
-12
-5
VTT + 0.76
-
Note :
1. VIN=0 to 3.6V, All other pins are not tested under VIN=0V
2. DOUT is disabled, VOUT=0 to 2.7V
Max
16
12
5
-
VTT - 0.76
Unit
uA
uA
V
V
Note
1
2
IOH = -15.2mA
IOL = +15.2mA
Rev. 0.3/May. 02
7