HY5V66GF Datasheet, PDF (8/11 Pages) Hynix Semiconductor – 4 Banks x 1M x 16Bit Synchronous DRAM

AC CHARACTERISTICS I
Parameter
Symbol
RAS Cycle Time
Operation
Auto Refresh
tRC
tRRC
RAS to CAS Delay
tRCD
RAS Active Time
tRAS
RAS Precharge Time
tRP
RAS to RAS Bank Active Delay
tRRD
CAS to CAS Delay
tCCD
Write Command to Data-In Delay
tWTL
Data-In to Precharge Command
tDPL
Data-In to Active Command
tDAL
DQM to Data-Out Hi-Z
tDQZ
DQM to Data-In Mask
tDQM
MRS to New Command
tMRD
CAS Latency = 3
Precharge to Data
Output Hi-Z
CAS Latency = 2
tPROZ3
tPROZ2
Power Down Exit Time
tPDE
Self Refresh Exit Time
tSRE
Refresh Time
tREF
-H
Min
Max
65
-
65
-
20
-
45
120K
20
-
15
-
1
-
0
-
1
-
4
-
2
-
0
-
1
-
3
-
2
-
1
-
1
-
-
64
-P
Min
Max
70
-
70
-
20
-
50
120K
20
-
20
-
1
-
0
-
1
-
3
-
2
-
0
-
1
-
3
-
2
-
1
-
1
-
-
64
Unit
ns
ns
ns
ns
ns
ns
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
Note
1
Note :
1. A new command can be given tRRC after self refresh exit
HY5V66GF
Rev. 0.4/Nov. 01
8