HY63V8400 Datasheet, PDF (7/8 Pages) Hynix Semiconductor – 512Kx8Bit CMOS FAST SRAM

HY63V8400 Series
FUNCTIONAL DESCRIPTION
/CS /WE /OE /LB
/UB
H
X
X*
X
X
L
H
H
X
X
L
X
X
H
H
L
H
L
H
L
H
L
L
L
L
H
L
L
X
H
L
L
L
* NOTE : X means Don,t Care
MODE
Not Select
Output Disable
Read
Write
I/O Pin
I/O1 - I/O8 I/O9 - I/O16
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Dout
Dout
High-Z
Din
Din
Supply Current
Isb,Isb1
Icc
Icc
Icc
DATA RETENTION ELECTRIC CHARATERISTIC
(TA = 0¡ Éto 70¡ É)
Symbol
Parameter
Test Condition
VDR
Vcc for Data Retention
/CS > Vcc - 0.2V
Vcc = 3.0V, /CS > Vcc - 0.2V
IDR
Data Retention
Current
Vin > Vcc - 0.2V or < 2.0V
Vcc = 2.0V, /CS > Vcc - 0.2V
Vin > Vcc - 0.2V or < 2.0V
tCDR
tR
Data Retention Set-Up Time
Recovery Time
Min Typ Max Unit
2.0 - 3.6 V
-
- 0.9
mA
-
- 0.7
0
-
-
ns
5
-
-
ms
DATA RETENTION TIMING DIAGRAM
VCC
3.0/2.7V
DATA RETENTION MODE
tCDR
tR
2.2V
VDR
CS
VSS
CS>Vcc-0.2V
Rev.02 / Jan.99
7