HY63V8400 Datasheet, PDF (3/8 Pages) Hynix Semiconductor – 512Kx8Bit CMOS FAST SRAM

HY63V8400 Series
AC CHARACTERISTICS
(Vcc = 3.3V ± 0.3V, TA = 0°C to 70°C, unless otherwise specified.)
# Symbol
Parameter
10ns
12ns
15ns
Min Max Min Max Min Max
Unit
READ CYCLE
1 tRC
Read Cycle Time
10 - 12 - 15 -
ns
2 tAA
Address Access Time
- 10 - 12 - 15 ns
3 tACS
Chip Select Access Time
- 10 - 12 - 15 ns
4 tOE
Output Enable to Output Valid
-
5
-
6
-
7
ns
5 tCLZ
Chip Select to Output in Low Z
3-
3-3
-
ns
6 tOLZ
Output Enable to Output in Low Z
0-
0-0
-
ns
7 tCHZ
Chip Deselecting to Output in High Z 0 5 0 6 0
7
ns
8 tOHZ Out Disable to Output in High Z
05060
7
ns
9 tOH
Output Hold from Address Change
3-
3-3
-
ns
WRITE CYCLE
10 tWC
Write Cycle Time
10 - 12 - 15 -
ns
11 tCW
Chip Select to End of Write
7-
8 - 10 -
ns
12 tAW
Address Valid to End of Write
7-
8 - 10 -
ns
13 tAS
Address Set-up Time
0-
0-0
-
ns
14 tWP
Write Pulse Width(/OE High)
7-
8 - 10 -
ns
15 tWP1 Write Pulse Width(/OE Low)
10 - 12 - 15 -
ns
16 tWR
Write Recovery Time
0-
0-0
-
ns
17 tWHZ Write to Output in High Z
05060
7
ns
18 tDW
Data to Write Time Overlap
5-
6-7
-
ns
19 tDH
Data Hold from Write Time
0-
0-0
-
ns
20 tOW
Output Active from End of Write
3-
3-3
-
ns
NOTE : Above parameters are also guaranteed at industrial temperature range.
Rev.02 / Jan.99
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