HY63V8400 Datasheet, PDF (2/8 Pages) Hynix Semiconductor – 512Kx8Bit CMOS FAST SRAM

HY63V8400 Series
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Rating
Unit
VIN, VOUT
Voltage on Any Pin Relative to Vss
-0.5 to 4.6
V
Vcc
Voltage on Vcc Supply Relative to Vss
-0.5 to 5.5
V
TA
Operating Temperature
Commercial
Industrial
0 to 70
-40 to 85
°C
°C
TSTG
Storage Temperature
-65 to 150
°C
PD
Power Dissipation
1.0
W
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (TA=0°C to 70°C)
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
-0.3(1)
Type
3.3
0
-
-
Max.
Unit
3.6
V
0
V
Vcc+0.3(2)
V
0.8
V
Note
1. VIL (min)= -2.0V a.c(pulse width less than 8ns) for I < 20mA
2. V_IH(max) = Vcc + 2.0V a.c(pulse width less than 8ns) for I < 20mA
DC ELECTRICAL CHARACTERISTICS
(Vcc = 3.3V±0.3V, TA = 0°C to 70°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min Typ Max Unit
ILI
Input Leakage Current VSS < VIN < VCC
-2 -
2
uA
ILO
Output Leakage Current VSS < VOUT < VCC,
-2
/CS = VIH or /OE = VIH or /WE = VIL
-
2
uA
/CS = VIL, VIN = VIH,
10ns
- - 200 mA
ICC Operating Current
II/O = 0mA
12ns
- - 190 mA
Min. Duty Cycle = 100% 15ns
-
- 180 mA
ISB
TTL Standby Current
(TTL Inputs)
/CS = VIH, VIN=VIH or VIL Min. Cycle -
-
60 mA
ISB1 CMOS Standby Current /CS > VCC-0.2V, VIN >
-
- 10 mA
(CMOS Inputs)
VCC-0.2V or VIN < 0.2V
L
-
1 mA
VOL Output Low Voltage
IOL = 8.0mA
- - 0.4 V
VOH Output High Voltage
IOH = -4.0mA
2.4 -
-
V
Note : Typical values are at Vcc = 3.3V, TA = 25°C
Rev.02 / Jan.99
2