HMT451S6MMP8C-S6 Datasheet, PDF (7/40 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMM

HMT451S6MMP(R)8C
2.2 Input/Output Functional Description
Symbol
Type Polarity
Function
CK0/CK0
CK1/CK1
Input
Cross point
The system clock inputs. All address and command lines are sampled on the cross
point of the rising edge of CK and falling edge of CK. A Delay Locked Loop (DLL) cir-
cuit is driven from the clock inputs and output timing for read operations is synchro-
nized to the input clock.
CKE[1:0]
Input
Active High
Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when
low. By deactivating the clocks, CKE low initiates the Power Down mode or the Self
Refresh mode.
S[1:0]
RAS, CAS, WE
BA[2:0]
Input
Input
Input
Active Low
Enables the associated DDR3 SDRAM command decoder when low and disables the
command decoder when high. When the command decoder is disabled, new com-
mands are ignored but previous operations continue. Rank 0 is selected by S0; Rank
1 is selected by S1.
Active Low
-
When sampled at the cross point of the rising edge of CK and falling edge of CK, sig-
nals CAS, RAS, and WE define the operation to be executed by the SDRAM.
Selects which DDR3 SDRAM internal bank of eight is activated.
ODT[1:0]
Input
A[9:0], A10/AP,
A11, A12/BC,
A[15:13]
Input
DQ[63:0] In/Out
Active High ^{Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the}
DDR3 SDRAM mode register.
During a Bank Activate command cycle, defines the row address when sampled at
the cross point of the rising edge of CK and falling edge of CK. During a Read or
Write command cycle, defines the column address when sampled at the cross point
of the rising edge of CK and falling edge of CK. In addition to the column address,
AP is used to invoke autoprecharge operation at the end of the burst read or write
-
cycle. If AP is high, autoprecharge is selected and BA0-BAn defines the bank to be
precharged. If AP is low, autoprecharge is disabled. During a Precharge command
cycle, AP is used in conjunction with BA0-BAn to control which bank(s) to
precharge. If AP is high, all banks will be precharged regardless of the state of BA0-
BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.
A12(BC) is sampled during READ and WRITE commands to determine if burst chop
(on-thefly) will be performed (HIGH, no burst chop; LOW, burst chopped)
-
Data Input/Output pins.
DM[7:0]
Input
Active High
The data write masks, associated with one data byte. In Write mode, DM operates
as a byte mask by allowing input data to be written if it is low but blocks the write
operation if it is high. In Read mode, DM lines have no effect.
DQS[7:0],
DQS[7:0]
In/Out
The data strobes, associated with one data byte, sourced with data transfers. In
Write mode, the data strobe is sourced by the controller and is centered in the data
Cross Point _{window. In Read mode, the data strobe is sourced by the DDR3 SDRAMs and is sent}
at the leading edge of the data window. DQS signals are complements, and timing is
relative to the crosspoint of respective DQS and DQS.
Rev. 0.2 / Apr. 2009
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