HY5V26CF Datasheet, PDF (6/14 Pages) Hynix Semiconductor – 4 Banks x 2M x 16bits Synchronous DRAM

HY5V26C(L/S)F
CAPACITANCE (TA=25°C, f=1MHz)
Parameter
ball
Symbol
Input capacitance
CLK
CI1
A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS,
CI2
WE, UDQM, LDQM
Data input / output capacitance DQ0 ~ DQ15
CI/O
-6/K/H
Min
Max
2.5
3.5
2.5
3.8
4.0
6.5
OUTPUT LOAD CIRCUIT
-8/P/S
Unit
Min
Max
2.5
4.0
pF
2.5
5.0
pF
4.0
6.5
pF
Output
Vtt=1.4V
RT=250 Ω
Output
50pF
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)
Parameter
Symbol
Min.
Max
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
ILI
ILO
VOH
VOL
-1
1
-1
1
2.4
-
-
0.4
Note :
1.VIN = 0 to 3.6V, All other balls are not tested under VIN =0V
2.DOUT is disabled, VOUT=0 to 3.6
Unit
Note
uA
1
uA
2
V
IOH = -2mA
V
IOL = +2mA
Rev. 0.9/Jul. 02
6