HY5V26CF Datasheet, PDF (5/14 Pages) Hynix Semiconductor – 4 Banks x 2M x 16bits Synchronous DRAM

ABSOLUTE MAXIMUM RATINGS
HY5V26C(L/S)F
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any ball relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature ⋅ Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 ⋅ 10
Note : Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION (TA=0 to 70°C)
Unit
°C
°C
V
V
mA
W
°C ⋅ Sec
Parameter
Symbol
Min
Typ
Max
Unit
Power Supply Voltage
Input High voltage
Input Low voltage
VDD, VDDQ
VIH
VIL
3.0
3.3
3.6
V
2.0
3.0
VDDQ + 0.3
V
-0.3
0
0.8
V
Note :
1.All voltages are referenced to VSS = 0V
2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
Note
1
1,2
1,3
AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4/0.4
1.4
1
1.4
50
Unit
V
V
ns
V
pF
Note
1
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output
load circuit
Rev. 0.9/Jul. 02
5