HYMD232646B8J-J Datasheet, PDF (5/18 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD232646B8J
AC OPERATING CONDITIONS (TA=0 to 70 ^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
VIL(AC)
VREF - 0.31
V
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ + 0.6
V
1
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
2
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.
AC OPERATING TEST CONDITIONS (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Reference Voltage
Termination Voltage
AC Input High Level Voltage (VIH, min)
AC Input Low Level Voltage (VIL, max)
Input Timing Measurement Reference Level Voltage
Output Timing Measurement Reference Level Voltage
Input Signal maximum peak swing
Input minimum Signal Slew Rate
Termination Resistor (RT)
Series Resistor (RS)
Output Load Capacitance for Access Time Measurement (CL)
Value
VDDQ x 0.5
VDDQ x 0.5
VREF + 0.31
VREF - 0.31
VREF
VTT
1.5
1
50
25
30
Unit
V
V
V
V
V
V
V
V/ns
W
W
pF
Rev. 0.2 / Apr. 2003
5