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HMT164S6BFR6C-G7 Datasheet, PDF (44/51 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMMs
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HMT164S6BFR6C
HMT112S6BFR6C
HMT125S6BFR8C
DDR3 1333 Speed Bin
DDR3-1333H
CL - nRCD - nRP
Parameter
Symbol
Internal read command to
first data
tAA
ACT to internal read or write
delay time
tRCD
9-9-9
min
max
13.5
20
13.5
—
PRE command period
tRP
13.5
—
ACT to ACT or REF command
period
tRC
49.5
—
ACT to PRE command period
tRAS
36
9 * tREFI
CL = 5
CL = 6
CL = 7
CWL = 5
CWL = 6, 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
CL = 8
CL = 9
CL = 10
CWL = 5
CWL = 6
CWL = 7
CWL = 5, 6
CWL = 7
CWL = 5, 6
CWL = 7
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Supported CL Settings
Supported CWL Settings
2.5
1.875
1.875
1.5
1.5
Reserved
Reserved
Reserved
Reserved
Reserved
(Optional)
Note 9.10
Reserved
Reserved
Reserved
Reserved
(Optional)
6, 7, 8, 9
5, 6, 7
3.3
< 2.5
< 2.5
<1.875
<1.875
*Speed Bin Table Notes*
Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);
Rev. 0.5 / Sep. 2009
Unit Note
ns
ns
ns
ns
ns
ns 1,2,3,4,7
ns
4
ns 1,2,3,7
ns 1,2,3,4,7
ns
4
ns
4
ns 1,2,3,4,7
ns
4
ns 1,2,3,7
ns 1,2,3,4
ns
4
ns 1,2,3,4
ns
4
ns
1,2,3
ns
5
nCK
nCK
44
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