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HMT164S6BFR6C-G7 Datasheet, PDF (4/51 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMMs | |||
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1. Description
HMT164S6BFR6C
HMT112S6BFR6C
HMT125S6BFR8C
This Hynix unbuffered Small Outline Dual In-Line Memory Module (SODIMM) series consists of 1Gb B version. DDR3
SDRAMs in Fine Ball Grid Array (FBGA) packages on a 204 pin glass-epoxy substrate. This DDR3 Unbuffered SODIMM
series based on 1Gb B version provide a high performance 8 byte interface in 67.60mm width form factor of industry
standard. It is suitable for easy interchange and addition.
1.1 Device Features & Ordering Information
1.1.1 Features
⢠VDD=VDDQ=1.5V
⢠8 banks
⢠VDDSPD=3.0V to 3.6V
⢠8K refresh cycles /64ms
⢠Fully differential clock inputs (CK, /CK) operation
⢠Differential Data Strobe (DQS, /DQS)
⢠On chip DLL align DQ, DQS and /DQS transition with
CK transition
⢠DDR3 SDRAM Package: JEDEC standard 78ball
FBGA(x4/x8), 96ball FBGA(x16) with support balls
⢠Driver strength selected by EMRS
⢠Dynamic On Die Termination supported
⢠DM masks write data-in at the both rising and falling
edges of the data strobe
⢠All addresses and control inputs except data, data
strobes and data masks latched on the rising edges of
the clock
⢠Programmable CAS latency 5, 6, 7, 8, 9, 10, and (11)
supported
⢠Programmable additive latency 0, CL-1 and CL-2 sup-
ported
⢠Asynchronous RESET pin supported
⢠ZQ calibration supported
⢠TDQS (Termination Data Strobe) supported (x8 only)
⢠Write Levelization supported
⢠Auto Self Refresh supported
⢠8 bit pre-fetch
⢠Programmable CAS Write latency (CWL) = 5, 6, 7, 8
⢠Programmable burst length 4/8 with both nibble
sequential and interleave mode
⢠BL switch on the fly
* This product is in compliance with the RoHS directive.
Rev. 0.5 / Sep. 2009
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