HY62V8200B Datasheet, PDF (4/12 Pages) Hynix Semiconductor – HY62V8200B Series 256Kx8bit CMOS SRAM

RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.2
-0.3(1)
Typ.
3.3
0
-
-
Note
VIL = -1.5V for pulse width less than 30ns
Max.
Unit
3.6
V
0
V
Vcc+0.3
V
0.4
V
Y62V8200B Series
DC ELCTRICAL CHARACTERISTICS
Vcc= 3.0~3.6V, TA = 0°C to 70°C/ -25°C to 85°C (E)/ -40°C to 85°C (I), unless otherwise specified
Sym. Parameter
Test Condition
Min. Typ. Max. Unit
ILI
Input Leakage Current
Vss < VIN < Vcc
-1
-
1
uA
ILO
Output Leakage Current
Vss < VOUT < Vcc, /CS1 = VIH or -1
-
1
uA
CS2 = VIL or /OE = VIH or /WE =
VIL
Icc
Operating Power Supply
/CS1 = VIL, CS2 = VIH,
-
-
5
mA
Current
VIN = VIH or VIL, II/O = 0mA
ICC1 Average Operating
Min Duty Cycle = 100%,
-
-
35 mA
Current
/CS1 = VIL CS2 = VIH
VIN = VIH or VIL
Cycle time = 1us, II/O = 0mA,
-
-
6
mA
/CS1 < 0.2V, CS2 > Vcc - 0.2V
VIN < 0.2V or VIN > Vcc – 0.2V
ISB
TTL Standby Current
/CS1 = VIH or CS2 = VIL
-
-
0.5 mA
(TTL Input)
VIN = VIH or VIL
ISB1
Standby
HY62V8200B /CS1 > Vcc - 0.2V or CS2 < 0.2V, -
-
25 uA
Current
HY62V8200B-E VIN > Vcc - 0.2V or
(CMOS Input) _HY62V8200B-I VIN < Vss + 0.2V
-
-
25 uA
-
-
25 uA
VOL
Output Low Voltage
IOL = 2.1mA
-
-
0.4 V
VOH Output High Voltage
IOH = -1.0mA
2.2 -
-
V
Note : Typical values are at Vcc = 3.3V, TA = 25°C
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Condition
VIN = 0V
VI/O = 0V
Max. Unit
8
pF
10
pF
Note : These parameters are sampled and not 100% tested
Rev 06 / Apr. 2001
3