HY62V8200B Datasheet, PDF (3/12 Pages) Hynix Semiconductor – HY62V8200B Series 256Kx8bit CMOS SRAM

Y62V8200B Series
ORDERING INFORMATION
Part No.
Speed
Power Temp.
HY62V8200BLLT1
70/85/100 LL-part
HY62V8200BLLR1
70/85/100 LL-part
HY62V8200BLLST
70/85/100 LL-part
HY62V8200BLLSR
70/85/100 LL-part
HY62V8200BLLT1-E
70/85/100 LL-part
E
HY62V8200BLLR1-E
70/85/100 LL-part
E
HY62V8200BLLST-E
70/85/100 LL-part
E
HY62V8200BLLSR-E 70/85/100 LL-part
E
HY62V8200BLLT1-I
70/85/100 LL-part
I
HY62V8200BLLR1-I
70/85/100 LL-part
I
HY62V8200BLLST-I
70/85/100 LL-part
I
HY62V8200BLLSR-I
70/85/100 LL-part
I
Note 1. Blank : Commercial, E : Extended, I : Industrial
Package
TSOPI(Standard)
TSOPI(Reversed)
Smaller TSOPI(Standard)
Smaller TSOPI(Reversed)
TSOPI(Standard)
TSOPI(Reversed)
Smaller TSOPI(Standard)
Smaller TSOPI(Reversed)
TSOPI(Standard)
TSOPI(Reversed)
Smaller TSOPI(Standard)
Smaller TSOPI(Reversed)
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Voltage on any pin relative to Vss
-0.2 to 3.9
V
VCC
Voltage on Vcc supply relative to
-0.2 to 4.0
V
Vss
TA
Operating Temperature
0 to 70
°C
HY62V8200B
-25 to 85
°C
HY62V8200B-E
-40 to 85
°C
HY62V8200B-I
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
IOUT
Data Output Current
50
mA
TSOLDER
Lead Soldering Temperature & Time 260 • 5
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 CS2 /WE /OE Mode
I/O
H
X
X
X
Deselected
High-Z
X
L
X
X
Deselected
High-Z
L
H
H
H
Output Disabled High-Z
L
H
H
L
Read
Dout
L
H
L
X
Write
DIN
Note :
1. H=VIH, L=VIL, X=don't care(VIH or VIL)
Power
Standby
Standby
Active
Active
Active
Rev 06 / Apr. 2001
2