HY62SF16804B Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM

HY62SF16804B
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min. Typ. Max. Unit
1.65 1.8
2.3
V
0
0
0
V
1.4
Vcc+0.3 V
-0.3(1) -
0.4
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 1.65V~2.3V, TA = 0°C to 70°C / -40°C to 85°C
Sym
Parameter
Test Condition
Min. Typ. Max. Unit
ILI Input Leakage Current
Vss < VIN < Vcc
-1
-
1
uA
Vss < VOUT < Vcc, /CS = VIH or
ILO Output Leakage Current /OE = VIH or /WE = VIL,
-1
-
1
uA
/UB = /LB = VIH
Icc
Operating Power Supply
Current
/CS = VIL, VIN = VIH or VIL, II/O = 0mA
-
3 mA
Icc1
Average Operating
Current
Cycle Time=Min,100% duty,
II/O = 0mA, /CS = VIL,VIN = VIH or VIL
Cycle time = 1us, 100% duty,
II/O = 0mA, /CS < 0.2V, VIN<0.2V
-
-
25 mA
-
3 mA
ISB
TTL Standby Current
(TTL Input)
/CS = VIH or /UB=/LB= VIH,
VIN = VIH or VIL
ISB1
Standby Current
(CMOS Input)
/CS > Vcc - 0.2V or
SL
/UB=/LB > Vcc-0.2V,
VIN > Vcc-0.2V or
VIN < Vss+0.2V
LL
VOL Output Low Voltage
IOL = 0.1mA
VOH Output High Voltage
IOH = -0.1mA
Note : 1. Typical values are at Vcc = 1.8V, TA = 25°C
2. Typical values are sampled and not 100% tested
-
- 0.05 mA
-
-
8
uA
-
1
15 uA
-
-
0.2 V
1.4
-
-
V
CAPACITANCE
(Temp = 25°C, f = 1.0MHz)
Symbol
Parameter
CIN
COUT
Input Capacitance(Add, /CS, /WE, /UB, /LB, /OE)
Output Capacitance(I/O)
Conditio
n
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.00/May. 2001
3