HMT425S6AFR6C Datasheet, PDF (4/55 Pages) Hynix Semiconductor – DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb A-die

Key Parameters
MT/s
DDR3-1066
DDR3-1333
DDR3-1600
DDR3-1866
Grade
-G7
-H9
-PB
-RD
tCK
(ns)
1.875
1.5
1.25
1.07
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
7
13.125 13.125 37.5 50.625
7-7-7
9
13.5
13.5
(13.125)* (13.125)*
36
49.5
(49.125)*
9-9-9
11
13.75 13.75
(13.125)* (13.125)*
35
48.75
(48.125)*
13
13.91 13.91
(13.125)* (13.125)*
34
47.91
(47.125)*
11-11-11
13-13-13
*SK hynix DRAM devices support optional downbinning to CL11, CL9 and CL7. SPD setting is programmed to match.
Speed Grade
Grade
-G7
-H9
-PB
-RD
CL5 CL6
667
800
667
800
667
800
800
Address Table
Frequency [MHz]
CL7
1066
1066
1066
1066
CL8 CL9
1066
1066
1333
1066 1333
1066 1333
CL10
1333
1333
1333
CL11
1600
1600
CL12
CL13
1866
Remark
Refresh Method
Row Address
Column Address
Bank Address
Page Size
2GB(1Rx16)
8K/64ms
A0-A14
A0-A9
BA0-BA2
2KB
4GB(2Rx16)
8K/64ms
A0-A14
A0-A9
BA0-BA2
2KB
4GB(1Rx8)
8K/64ms
A0-A15
A0-A9
BA0-BA2
1KB
8GB(2Rx8)
8K/64ms
A0-A15
A0-A9
BA0-BA2
1KB
Rev. 1.0 / Jul. 2013
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