HMT425S6AFR6C Datasheet, PDF (31/55 Pages) Hynix Semiconductor – DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb A-die

Standard Speed Bins
DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-800 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 36.
Speed Bin
DDR3-800E
CL - nRCD - nRP
Parameter
Internal read command to first data
Symbol
t_AA
6-6-6
min
max
15
20
ACT to internal read or write delay time
t_RCD
15
—
PRE command period
t_RP
15
—
ACT to ACT or REF command period
t_RC
52.5
—
ACT to PRE command period
CL = 5
CL = 6
CWL = 5
CWL = 5
Supported CL Settings
Supported CWL Settings
t_RAS
t_CK(AVG)
t_CK(AVG)
37.5
9 * tREFI
3.0
3.3
2.5
3.3
5, 6
5
Unit
Notes
ns
ns
ns
ns
ns
ns _{1, 2, 3, 4, 11}
ns
1, 2, 3
n_CK
10
n_CK
Rev. 1.0 / Jul. 2013
31