HMT425S6AFR6C Datasheet, PDF(30/55 Page) Hynix Semiconductor – DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb A-die

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HMT425S6AFR6C Datasheet, PDF (30/55 Pages) Hynix Semiconductor – DDR3 SDRAM Unbuffered SODIMMs Based on 4Gb A-die

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Refresh parameters by device density

Parameter

RTT_Nom Setting

512Mb 1Gb

2Gb

4Gb

8Gb Units

REF command ACT or

REF command time

tRFC

110

160

260

350

Average periodic

refresh interval

tREFI

0 ï°C ï£ TCASE ï£ 85 ï°C

85 ï°C ï¼ TCASE ï£ 95 ï°C

7.8

3.9

7.8

3.9

7.8

3.9

7.8

3.9

7.8

3.9

Notes:

1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices

support the following options or requirements referred to in this materia.

Rev. 1.0 / Jul. 2013

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